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F-RAM FM25V02A-GTR SOIC-8

 

2024-04-01 09:42:21

晨欣小编

F-RAM FM25V02A-GTR SOIC-8 is a high-performance nonvolatile memory device that offers fast read and write times, high endurance, and low power consumption. This memory device is ideal for applications that require high reliability and fast access times, such as industrial automation, automotive systems, and medical devices.

The FM25V02A-GTR SOIC-8 has a 2 Mb capacity and operates at a voltage range of 1.8V to 3.6V, making it compatible with a wide range of systems. Its Serial Peripheral Interface (SPI) allows for easy integration into existing designs and provides a simple interface for communication with a microcontroller.

One of the key features of the FM25V02A-GTR SOIC-8 is its fast read and write times. With a maximum read speed of 40 MHz and a write speed of 10 MHz, this memory device can quickly retrieve and store data, making it ideal for applications that require real-time processing and high-speed communication.

In addition to its performance benefits, the FM25V02A-GTR SOIC-8 is also highly reliable. It has a specified endurance of 100 trillion read/write cycles, ensuring that it can withstand the rigors of continuous use in demanding environments. Its high reliability makes it suitable for applications where data integrity is essential, such as critical control systems and data logging applications.

Furthermore, the FM25V02A-GTR SOIC-8 has low power consumption, making it ideal for battery-powered devices or applications where power efficiency is important. With a standby current of just 10 μA and an active current of 4 mA during read/write operations, this memory device can help extend the battery life of portable electronics and other power-sensitive devices.

Overall, the F-RAM FM25V02A-GTR SOIC-8 is a high-performance, reliable, and power-efficient memory device that is well-suited for a wide range of applications. Its fast read and write times, high endurance, and low power consumption make it an ideal choice for designers looking for a versatile nonvolatile memory solution.

 

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